| PART |
Description |
Maker |
| AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30
64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22
256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22
1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22
128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
| MCM6664A |
64K-Bit DRAM
|
Motorola
|
| AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28
64K X 8 OTPROM, 90 ns, PDIP28
64K X 8 UVPROM, 55 ns, CDIP28
64K X 8 UVPROM, 90 ns, CDIP28
64K X 8 UVPROM, 70 ns, CDIP28
IC 集成电路
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
Rochester Electronics, LLC
AMD
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM
From old datasheet system
IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology Inc
Integrated Device Technology, Inc.
|
| CY62126V CY62126VLL-55BAC CY62126VLL-70BAI CY62126 |
64K X 16 STANDARD SRAM, 70 ns, PDSO44
64K X 16 STANDARD SRAM, 55 ns, PDSO44
64K X 16 STANDARD SRAM, 70 ns, PBGA48
64K X 16 STANDARD SRAM, 55 ns, PBGA48
From old datasheet system
64K x 16 Static RAM
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1021BNV33L-10ZXC CY7C1021BNV33L-15BAI CY7C1021 |
64K x 16 Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Static RAM 64K的16静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IBM041813PPLB |
64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝发流水线式线式高性能静态RAM) 64K的X管道18的SRAM00万（64K的X 18）同步可猝发流水线式线式高性能静态内存）
|
International Business Machines, Corp.
|
| CYM1730 1730 |
64K x 24 Static RAM Module(64K x 24 静态RAM模块) 64K的24静态RAM模块4K的24静态RAM的模块）
From old datasheet system
|
Cypress Semiconductor Corp.
|
| CY7C1021CV26-15ZE |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1021CV33-8BAXC CY7C1021CV33-8ZXC CY7C1021CV33- |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
