| PART |
Description |
Maker |
| APT20GT60CR |
Thunderbolt IGBT 600V 25A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| APT15GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 31A
|
ADPOW[Advanced Power Technology]
|
| APT30GT60CR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 30A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT40GT60BR |
Thunderbolt IGBT
|
Microsemi Corporation
|
| APT100GN120B2 APT100GN120B2G |
Thunderbolt IGBT
|
Microsemi Corporation
|
| APT50GT120LR APT50GT120B2R APT50GT120B2RG |
Thunderbolt IGBT
|
Microsemi Corporation
|
| APT100GT120JRDQ4 |
Thunderbolt IGBT
|
Microsemi Corporation
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| APT30GS60SRDQ2 APT30GS60SRDQ2G APT30GS60BRDQ2 APT3 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| APT50GS60BRDQ2 APT50GS60BRDQ2G APT50GS60SRDQ2 APT5 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| APT20GS60SRDQ1 APT20GS60SRDQ1G APT20GS60BRDQ1 APT2 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
