PART |
Description |
Maker |
APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
PRZA-1-10W |
RESISTOR, WIRE WOUND, 10 W, 350; 400 ppm, 1 ohm - 820 ohm, THROUGH HOLE MOUNT RADIAL LEADED
|
Piher Sensors ?Controls SA
|
NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION 0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION 0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics Ecliptek, Corp. Daishinku, Corp. Electronic Theatre Controls, Inc. 飞思卡尔半导体(中国)有限公司 Pulse Engineering, Inc. HIROSE ELECTRIC Co., Ltd.
|
SGSP575 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
STMICROELECTRONICS
|
IRFU322 |
2.3 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
STP11NB40 |
10.7 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
IRFR310 |
1.7 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
VISHAY INTERTECHNOLOGY INC
|
FDP13N40 |
13 A, 400 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
SIHF740STRL-GE3 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
2N6800TXV |
3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
HARRIS SEMICONDUCTOR
|
IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
HARRIS SEMICONDUCTOR Intersil Corporation
|
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