| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
| APT35GP120JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP60BDQ1 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT30GP60JDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|
| APT26GU30SA APT26GU30K |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT45GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT25GP90B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT50GP60B2DF2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|