| PART |
Description |
Maker |
| APT5027 APT5027BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 500V 20A 0.270 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| AOB20S60 AOT20S60 AOTF20S60 AOB20S60L |
600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| RJH1CM6DPQ-E013 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| FGA20S120M |
1200V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| NGTB20N120L |
IGBT 1200V 20A FS1 Gen Mkt
|
ON Semiconductor
|
| RJK60S5DPE-00-J3 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CRNA25-800 CRNA25-600 CRNA25-1200 CRNA25-1200PT CR |
25Amp - 400/600/800/1200V - RECTIFIER 25Amp - 400/600/800/1200V -整流
|
Electronic Theatre Controls, Inc.
|
