| PART |
Description |
Maker |
| SLF0912-560N SLF0912-390N SLF0912-270N SLF0912-180 |
NORMAL MODE CHOKES
|
SUMIDA[Sumida Corporation]
|
| IPP120N10S4-05 IPB120N10S4-05 |
N-channel - Normal Level - Enhancement mode
|
Infineon Technologies A...
|
| IPZ40N04S5-3R1 IPZ40N04S5-3R1-15 |
N-channel - Enhancement mode - Normal Level
|
Infineon Technologies A...
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
| EM7323SU16HT-70L EM7323SU16HT-70LF EM7323SU16HT-70 |
2M x 16Bit Asynchronous / Page Mode StRAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K4F641612C-TC K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| A701 |
A701: Test slide, various cancers plus corresponding normal
A701: Test slide various cancers plus corresponding normal
A701: Test slide, various cancers plus corresponding normal
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
|
