| PART |
Description |
Maker |
| A43L8316 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
| MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万（256K × 8/128K × 16）位快闪记忆体（V的电源电56K × 8/128K × 16闪速存储器
2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
|
Fujitsu, Ltd.
Fujitsu Limited
|
| KM4132G271AQ-10 KM4132G271A KM4132G271A-8 KM4132G2 |
128K x 32Bit x 2 Banks Synchronous Graphic RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| UPD431000A-XXX UPD431000AGZ-85L-KJH UPD431000ACZ-X |
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT
128K X 8 STANDARD SRAM, 85 ns, PDSO32
|
NEC
|
| W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM
512K x 2 BANKS x 16 BIT SDRAM
From old datasheet system
|
Winbond Electronics
|
| LTC1876 |
High Efficiency, 2-Phase, Synchr., Dual, Step-Down Sw. Contr. W/ Step-Up Reg.
|
Linear
|
| UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns
1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
| KM68V1002CI |
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes
Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| TC55V4376FF-83 |
128K Word x 36 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?36浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
| AT27BV010 AT27BV010-15TC AT27BV010-15TI AT27BV010- |
AML24 Series Rocker Switch, SPDT, 2 position, Gold Contacts, 0.110 in x 0.020 in (Solder or Quick-Connect), Non-Lighted, Rectangle, Snap-in Panel 128K X 8 OTPROM, 90 ns, PQCC32
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M bit, 2.7-Volt to 3.6-Volt EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL Corporation
|
