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A28F200BR-TB - 2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY

A28F200BR-TB_1204393.PDF Datasheet


 Full text search : 2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
 Product Description search : 2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY


 Related Part Number
PART Description Maker
AB28F200BR-T80 A28F200BR-TB A28F200BR-B AB28F200BR 2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
JT 42C 42#22 PIN RECP
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K X 16/ 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
Intel Corp.
SST39LF010-90-4I-NH SST39VF020-70-4C-NK SST39LF010 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
Hexadecimal and Numeric DIsplays for Industrial Applications
SMT TAPE AND REEL RELAY
Replaced by PT78ST212 : 12Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
EN60950 Relay
Replaced by PT6302 : 5Vout 3Amp Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 70
LED Light Bars
7.62 mm (0.3 inch) Single Digit General Purpose Seven Segment Display
PCB Relay; Contacts:DPDT; Contact Carry Current:2A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Coil Resistance:125ohm; Coil Power VDC:200mW; Relay Mounting:PC Board RoHS Compliant: Yes 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
10 mm (0.4 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加
10.9 mm (0.43 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
10-Element Bar Graph Array 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PDSO32
Replaced by PT78ST165 : 6.5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪
Replaced by PT78HT205 : 5Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
Replaced by PT78HT233 : 3.3VOUT 2A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE -40 TO 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
Replaced by PT6213 : 3.45Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
128K X 8 FLASH 2.7V PROM, 90 ns, UUC
64K X 8 FLASH 2.7V PROM, 90 ns, UUC
Silicon Storage Technology, Inc.
Silicon Storage Technology Inc
Cinch Connectors
Microchip Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technol...
GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GSI Technology
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- 36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
A28F200BR-TB AB28F200BR-T80 2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
INTEL[Intel Corporation]
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
Integrated Device Technology, Inc.
IDT
SST29EE020-150-4C-EH SST29LE020-250-4C-EH SST29VE0 x8 EEPROM
4 Mbit (512K x 8/256K x 16) nvSRAM x8的EEPROM
1 Mbit (128K x 8) nvSRAM x8的EEPROM
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
GS840E36AGT-180I 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
GSI Technology, Inc.
IS61VPS12836A-250B3I 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
Integrated Silicon Solution, Inc.
A28F200BX-B 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) 2兆位56K × 8)开机区块快闪记忆体兆位28K的16)引导块闪速存储器
Intel Corp.
Intel, Corp.
E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Dual-Slot, PCMCIA Analog Power Controller
Evaluation Kit for the MAX5943A/B/C/D/E
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
Intel Corporation
Intel Corp.
Intel, Corp.
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存)
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
Integrated Silicon Solution, Inc.
 
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