| PART |
Description |
Maker |
| AB28F200BR-T80 A28F200BR-TB A28F200BR-B AB28F200BR |
2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY JT 42C 42#22 PIN RECP 2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K X 16/ 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
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Intel Corp.
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| SST39LF010-90-4I-NH SST39VF020-70-4C-NK SST39LF010 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash Hexadecimal and Numeric DIsplays for Industrial Applications SMT TAPE AND REEL RELAY Replaced by PT78ST212 : 12Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 EN60950 Relay Replaced by PT6302 : 5Vout 3Amp Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 70 LED Light Bars 7.62 mm (0.3 inch) Single Digit General Purpose Seven Segment Display PCB Relay; Contacts:DPDT; Contact Carry Current:2A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Coil Resistance:125ohm; Coil Power VDC:200mW; Relay Mounting:PC Board RoHS Compliant: Yes 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 10 mm (0.4 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 10.9 mm (0.43 inch) Seven Segment Displays 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 10-Element Bar Graph Array 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 2.7V PROM, 90 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 90 ns, PDSO32 Replaced by PT78ST165 : 6.5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 Replaced by PT78HT205 : 5Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PBGA48 Replaced by PT78HT233 : 3.3VOUT 2A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE -40 TO 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PBGA48 Replaced by PT6213 : 3.45Vout 2A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 512千位/ 1兆位/ 2 4兆位(8)多用途闪 64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 128K X 8 FLASH 2.7V PROM, 90 ns, UUC 64K X 8 FLASH 2.7V PROM, 90 ns, UUC
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Silicon Storage Technology, Inc. Silicon Storage Technology Inc Cinch Connectors Microchip Technology, Inc. SILICON STORAGE TECHNOLOGY INC Silicon Storage Technol...
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| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119 4Mb56K x 18Bit) Synchronous Burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器)) 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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GSI Technology
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
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Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
| A28F200BR-TB AB28F200BR-T80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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INTEL[Intel Corporation]
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100 25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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Integrated Device Technology, Inc. IDT
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| SST29EE020-150-4C-EH SST29LE020-250-4C-EH SST29VE0 |
x8 EEPROM 4 Mbit (512K x 8/256K x 16) nvSRAM x8的EEPROM 1 Mbit (128K x 8) nvSRAM x8的EEPROM
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TE Connectivity, Ltd. Silicon Storage Technology, Inc.
|
| GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
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GSI Technology, Inc.
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
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Integrated Silicon Solution, Inc.
|
| A28F200BX-B |
2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引导块闪速存储器) 2兆位56K × 8)开机区块快闪记忆体兆位28K的16)引导块闪速存储器
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Intel Corp. Intel, Corp.
|
| E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Dual-Slot, PCMCIA Analog Power Controller Evaluation Kit for the MAX5943A/B/C/D/E 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
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Intel Corporation Intel Corp. Intel, Corp.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
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Integrated Silicon Solution, Inc.
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