| PART |
Description |
Maker |
| 3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
General Electric Solid State
|
| 3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
General Electric Solid State
|
| 3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
Intersil
|
| MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| GT8G132 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GT20J101 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
