| PART |
Description |
Maker |
| PD100F12 |
FRD MODULE - 100A/1200V/trr:250nsec
|
Nihon Inter Electronics Corporation
|
| RJ80536GE0412M |
M Processor on 90ns Process
|
Intel
|
| IRF1407SPBF IRF1407LPBF IRF1407SPBF-15 |
HEXFET? Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A )
HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A )
Advanced Process Technology
|
International Rectifier
|
| AS29LV400T-90TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 90ns access time
|
Alliance Semiconductor
|
| FCF16A40 |
FRD
|
ETC
|
| FCU20UC30 |
FRD
|
Nihon Inter Electronics Corporation
|
| 10DF2 |
FRD
|
Electronic Theatre Controls, Inc.
ETC
|
| F10P20FR |
FRD
|
ETC
|
| KCF25A40 |
FRD
|
ETC
|
| FCF06A40 |
FRD TYPE
|
ETC
|
