| PART |
Description |
Maker |
| 2SC4666 E000970 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER/ SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER SWITCHING APPLICATIONS)
From old datasheet system
AUDIO FREQUENCY AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
NPN EPITAXIAL TYPE (AUDIO FREQUENCY AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5376 EE08405 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER/ FOR MUTING AND SWITCHING APPLICATIONS)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER FOR MUTING AND SWITCHING APPLICATIONS)
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, FOR MUTING AND SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC466607 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC5376F07 2SC5376F |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2458 2SC245803 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4116 E000906 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
TOSHIBA
|
| 2SC3666 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SC4116 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
