| PART |
Description |
Maker |
| 2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC3808 |
NPN Epitaxial Planar Silicon Transistors for High hFE, Low-Frequency General-Purpose Amplifier Applications(用于高直流电流增益，低频通用放大器应用的NPN硅外延平面型晶体 瑞展HFE的高硅，低晶体管频率通用放大器应用（用于高直流电流增益，低频通用放大器应用的npn型硅外延平面型晶体管
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co., Ltd.
|
| 2SC36511 2SC3651 |
High hFE, Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SA1434 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| CSB834 CSB834O CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 200 hFE. Complementary CSD880
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD880O
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y
|
Continental Device India Limited
|
| 2SC3807C |
2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Planar Silicon Transistor 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| CSC1008Y |
0.800W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 40 - 80 hFE.
|
Continental Device India Limited
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
