| PART |
Description |
Maker |
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SC4869 2SC4869-5 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 50MA I(C) | SOT-143R
VHF to UHF Wide-Band Low-Noise Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC2782 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2640 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp.
Microsemi Corporation
|
| VHB25-12S |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| 2SC1324 |
MITSUBISHI RF POWER TRANSISTOR
NPN EPITAXIAL PLANAR TYPE(BROADBAND AMPLIFIERS FROM VHF TO UHF BAND)
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
