| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管（功率放大器，放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| CJD42CPNP CJD41C CJD41CNPN CJD42C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1557 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1837 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| KSA614YTSTU KSA614 KSA614Y KSA614YTU KSA614O KSA61 |
Low Frequency Power Amplifier
PNP Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 3 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| NTE265 |
Si, SMALL SIGNAL TRANSISTOR, TO-202
Silicon NPN Transistor Darlington Power Amplifier
|
NTE Electronics
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| KSD2012 KSD2012GTU |
LOW FREQUENCY POWER AMPLIFIER 3 A, 60 V, NPN, Si, POWER TRANSISTOR
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB1015 2SB1015A EA09109 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
