| PART |
Description |
Maker |
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| 2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
| 2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor
12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz
NV Trimmer Potentiometer
|
GHz Technology
|
| UMC3NT1 UMC5NT2 UMC3NT2 |
Dual Common Base Collector Bias Resistor Transistors(偏置电阻晶体
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| 1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1600 - 1800 MHz
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一c）|7DVAR
|
GHZTECH[GHz Technology]
Fairchild Semiconductor, Corp.
|
| MDS400 |
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 400; P(in) (W): 90; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
400 Watts Pk, 45 Volts, 32us, 2% Avionics 1030-1090 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHz Technology
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| 20F001N |
10 Base T Filter with Common Choke
|
ETC
|
| DME375 |
375 W, 50 V internally matched, common base transistor
|
Acrian
|
| SD2900 SD2902 SD2903 SD3932 SD3933 PD57002 PD84001 |
HF TO 2000 MHZ CLASS AB COMMON SOURCE - POWERSO-10RF
|
ETC[ETC]
|
|
