| PART |
Description |
Maker |
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 2224-6L |
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 22; Case Style: 55LV-1 S BAND, Si, NPN, RF POWER TRANSISTOR
3.3V EconoReset
6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
|
| 2SC4246 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
| 2223-1.7 2223-17 |
1.7 W, 24 V, 2200-2300 MHz common base transistor
1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz
BJT
|
GHZTECH[GHz Technology]
|
| MS2472 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
| UMC3NT1 UMC3NT2 UMC5NT1G UMC3NT2G |
Dual Common Base-Collector Bias Resistor Transistors
Dual Common Base−Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| UMC3NT1 UMC5NT2 UMC3NT2 |
Dual Common Base Collector Bias Resistor Transistors(偏置电阻晶体
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor
|
GHz Technology
|
| 1415-2 |
2 W, 20 V, 1430-1540 MHz common base transistor
|
GHz Technology
|
|
