| PART |
Description |
Maker |
| CM3132-02SB CM3132-02SH |
Triple Linear Voltage Regulator for DDR-I and DDR-II Memory and CPU
|
California Micro Devices Corp
|
| 8S89833 8S89833AKILF 8S89833AKILFT 8S89833-17 |
Low Skew, 1-To-4 Different ial-To-LVDS Fanout Buffer w/Internal Terminat ion
|
Integrated Device Techn...
|
| AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| AS4DDR32M72PBG1-6_ET AS4DDR32M72PBG1-6_IT AS4DDR32 |
32M X 72 DDR DRAM, 0.8 ns, PBGA208 16 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208
32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor, Inc
|
| NCP5210 |
3-In-1 PWM Dual Buck and Linear DDR Power Controller
|
ON Semi
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SC259609 |
Low Voltage Integrated DDR Termination Regulator
|
Semtech Corporation
|
| IDT72T40108L6-7BB IDT72T40118L6-7BB IDT72T40118L6- |
64K x 40 TeraSync DDR FIFO, 2.5V
128K x 40 TeraSync DDR FIFO, 2.5V
2.5 VOLT HIGH-SPEED TeraSync?? DDR/SDR FIFO 40-BIT CONFIGURATION
16K x 40 TeraSync DDR FIFO, 2.5V
32K x 40 TeraSync DDR FIFO, 2.5V
|
IDT
|
| PLL103-03 PLL103-03XC PLL103-03XI PLL103-03XM |
DDR SDRAM Buffer with 4 DDR or 3 SDR/2 DDR DIMMS
|
PhaseLink Corporation
|
| KA2293 KA2293D KA22293Q KA22293 |
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
LINEAR INTEGRATED CIRCUIT
|
SAMSUNG[Samsung semiconductor]
|
| IR3832WMPBF IR3832WMTR1PBF |
HIGHLY EFFICIENT INTEGRATED SYNCHRONOUS BUCK REGULATOR FOR DDR APPLICATIONS
|
International Rectifier
|
