| PART |
Description |
Maker |
| SA600 SA600D NE600D |
1GHz LNA and mixer 1GHz的低噪声放大器和混频
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SA601 |
Low voltage LNA and mixer - 1GHz
From old datasheet system
|
Philips
|
| SA611DK SA611 SA611_3 |
1 GHz low voltage LNA and mixer
From old datasheet system
1GHz low voltage LNA and mixer
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2213UK D2213 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
| SY89834U SY89834UMI SY89834UMITR |
2.5V/3.3V TWO INPUT , 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR 2.5V/3.3V的两个INPUT1GHz的LVTTL / CMOS电到的LVPECL 1:4扇出缓冲翻译
2.5V/3.3V TWO INPUT 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| SP4633NADP SP4633 |
1GHz 64 NON SELF OSCILLATING PRESCALER
|
Zarlink Semiconductor Inc
|
| ISL5944207 |
1GHz, 4 x 1 Multiplexing Amplifier
|
Intersil Corporation
|
| MC12026BP MC12026A MC12026AD MC12026AP MC12026B MC |
1.1GHz Dual Modulus Prescaler
|
MOTOROLA[Motorola, Inc]
|
