| PART |
Description |
Maker |
| BGF1801-10 |
GSM1800 EDGE power module 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PFM18030SM PFM18030 PFM18030F |
1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| NE5500179A NE5500179A-T1 |
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| 400CNQ045 400CNQ040 400CNQ 400CNQ035 5510279A |
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS 3.5 V工作硅射频功率MOSFETGSM1800系统输电功放
SCHOTTKY RECTIFIER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
IRF[International Rectifier]
|
| PH1819-45A |
L BAND, Si, NPN, RF POWER TRANSISTOR
Wireless Power Transistor 45 Watts 1805 - 1880 MHz
Wireless Power Transistor 45 Watts, 1805 - 1880 MHz
|
Kycon, Inc.
MACOM[Tyco Electronics]
|
| BGF1901-10 |
GSM1900 EDGE power module
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| RMPA1967 |
US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge Power Amplifier Module
|
Fairchild Semiconductor Corporation
|
| RMPA0967 |
Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWE6159R AWE6159RM46P8 AWE6159RM46P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module
|
ANADIGICS, Inc
|
| SKY77365 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
| SKY77360-12 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE / TD-SCDMA
|
Skyworks Solutions Inc.
|
