PART |
Description |
Maker |
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包,中功 (STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power 1300 nm Laser in Receptacle Package,Medium Power 1300 nm Laser in Receptacle Package Medium Power From old datasheet system 1300 nm Laser, Medium Power
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) From old datasheet system Medium Power Transistor (-50V, -1A)
|
ROHM
|
MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc. Agilent (Hewlett-Packard)
|
2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (32V, 0.5A) Medium Power Transistor (32V 0.5A) Medium Power Transistor (32V/ 0.5A)
|
ROHM[Rohm]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 |
NPN medium power transistors TRANSISTOR MEDIUM POWER 晶体管中功率
|
NXP Semiconductors PHILIPS[Philips Semiconductors] Microchip Technology, Inc.
|
CR12CM-12A CR12CM-12A-A8 CR12CM-12A-13 CR12CM-12A- |
Thyristor Medium Power Use 600V - 12A - Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
QM30E3Y-2H QM30E2Y-2H QM30E2Y |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
SF16JZ51 SF16GZ51 |
MEDIUM POWER CONTROL APPLICATIONS THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
KSB1116S KSB1116SYBU KSB1116SYTA KSB1116SYTANL |
PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier Medium Speed Switching From old datasheet system Audio Frequency Power Amplifier Medium Speed Switching
|
FAIRCHILD[Fairchild Semiconductor]
|