| PART |
Description |
Maker |
| BAY8012 BAY80-TAP |
Small Signal Switching Diode, High Voltage
DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode
|
Vishay Siliconix
Vishay Semiconductors
|
| 1S922 1S923 1S923TR 1S922TR |
Small Signal Diode 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35
High Conductance Fast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| EGF1T-HE3 |
DIODE 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE
ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE
1 A, 20 V, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| 1N3064 1N3064T50R 1N3064TR |
Small Signal Diode 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35
High Conductance Fast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| RGP10D |
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| MUR160 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| BAT54-HT3 |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, PLASTIC, LLP75-3B, 3 PIN, Signal Diode
|
Vishay Semiconductors
|
| JAN1N4148-1 BE112R |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; IFSM (A): 0.25; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.2 A, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
|
|
