| PART |
Description |
Maker |
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
http://
RECTRON[Rectron Semiconductor]
|
| 1N4001GP 1N4002GP 1N4003GP 1N4004GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 50V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 100V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
|
Vishay
|
| FR301G FR307G FR302G FR303G FR304G FR305G FR306G F |
GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
1000 V, 3 A, glass passivated junction fast recovery rectifier
|
EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
|
| 5KP5.0 5KP14C 5KP48 5KP70 5KP120A 5KP90CA 5KP 5KP1 |
Optocoupler; Isolation Voltage:5300Vrms; Optocoupler Output Type:Transistor; Package/Case:6-DIP; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Voltage Rating:1.25V RoHS Compliant: Yes
GLASS PASSIVATED JUNCTION TRANSIENTVOLTAGE SUPPRESSOR 玻璃钝化结TRANSIENTVOLTAGE抑制
GLASS PASSIVATED JUNCTION TRANSIENTVOLTAGE SUPPRESSOR 玻璃钝化TRANSIENTVOLTAGE抑制
|
http://
TRSYS
FORMOSA[Formosa MS]
美丽微半导体有限公司
Formosa Microsemi Co., Ltd.
|
| 1A7G 1A1G 1A2G 1A3G 1A4G 1A5G 1A6G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE
|
RECTRON[Rectron Semiconductor]
PanJit International, Inc.
|
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| 1N5624GP 1N5625GP 1N5626GP |
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 400V
Glass Passivated Junction Rectifiers, Forward Current 3.0A, Rev. Voltage 600V
|
Vishay
|
| FR301G05 FR306G |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
EIC discrete Semiconduc...
|
| FR151G05 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
