| PART |
Description |
Maker |
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| 2DI30D-050 2DI30D-050A |
POWER TRANSISTOR MODULE 功率晶体管模
POWER TRANSISTOR MODULE 30 A, 600 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| 1DI300ZN-120 |
power transistor module
Low-Power, 1% Accurate, Dual-/Triple-/Quad-Level Battery Monitors in Small TDFN and TQFN Packages
300 A, 1200 V, NPN, Si, POWER TRANSISTOR
|
Fuji Electric
List of Unclassifed Manufacturers
ETC
|
| CPW235P CPW256P |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET功率模块|独立| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 14A I(D)
|
Atmel, Corp.
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| 6DI100A-050 |
POWER TRANSISTOR MODULE 100 A, 600 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M |
100ns; 5V power supply; 8M x 32 flash module
120ns; 5V power supply; 8M x 32 flash module
150ns; 5V power supply; 8M x 32 flash module
8M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 40 MM, DUAL CAVITY, CERAMIC, QFP-68
8Mx32 5V Flash Module(8Mx32 5V闪速存储器模块)
Flash MCP
|
Glenair, Inc.
White Electronic Designs Corporation
|
| ETN35-030 |
POWER TRANSISTOR MODULE
|
List of Unclassifed Manufacturers
ETC
|
| 1DI300MN-120 |
Power Transistor Module
|
Fuji Electric
|
