| PART |
Description |
Maker |
| RJ80536GE0412M |
M Processor on 90ns Process
|
Intel
|
| APT7F120B APT7F120S APT7F120B09 |
N-Channel FREDFET 1200V, 7A, 2.4Ω Max, trr ?90ns
|
Microsemi Corporation
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| F10P20FR |
FRD
|
ETC
|
| FCU20UC30 |
FRD
|
Nihon Inter Electronics Corporation
|
| 31DF4 |
FRD
|
Nihon Inter Electronics Corporation
ETC
|
| 10ELS2 |
FRD
|
ETC
Nihon
|
| EC8FS6 |
FRD
|
ETC
|
| C16T20F C16T20F-11A |
FRD
|
Nihon
ETC
|
| 10ERA60 |
FRD
|
http://
NIEC[Nihon Inter Electronics Corporation]
|
| PVD1354NS PVD1352NS |
100V 1 Form A Photo Voltaic Relay in a mod. 8-pin SMT Package 100V A型相片光伏继电器在国防部8引脚SMT封装
|
International Rectifier, Corp.
|
| FQB34P10TM FQB34P10TM-F085 |
100V P-Channel MOSFET
-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
|
Fairchild Semiconductor
|
