| PART |
Description |
Maker |
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| 1214-300M |
300 Watts - 40 Volts, 150楼矛s, 10% Radar 1200 - 1400 MHz
300 Watts - 40 Volts, 150μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-110V |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Advanced Power Technology
Microsemi Corporation
|
| LH-FSLH-S130C-0406A FSLH-S130C |
2012 Size 1200/1400 MHz Chip Multilayer Splitter/Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| BX3086 |
1400 MHz - 1600 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
SPECTRUM CONTROL INC
|
| 2224-6L |
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 22; Case Style: 55LV-1 S BAND, Si, NPN, RF POWER TRANSISTOR
3.3V EconoReset
6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
|
| TN3002 FP3002 TM3002 BX3002 |
1400 MHz - 2400 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
RF AMPLIFIER MODEL
|
SPECTRUM CONTROL INC
API Technologies Corp
|
| ZHL-1217HLN |
1200 MHz - 1700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER CASE NN92
|
Mini-Circuits
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