| PART |
Description |
Maker |
| IS45S32200C1-7BLA1 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| W9816G6IH W9816G6IH-7I W9816G6IH-6I W9816G6IH-5 |
512K × 2 BANKS × 16 BITS SDRAM
512K 隆驴 2 BANKS 隆驴 16 BITS SDRAM
|
Winbond
|
| W981616BH |
512K 2 BANKS 16 BITS SDRAM
|
Winbond
|
| W9816G6CB W9816G6CB-6 W9816G6CB-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| N16D1633LPAZ2-75I N16D1633LPA N16D1633LPAC2-10I N1 |
512K 】 16 Bits 】 2 Banks Low Power Synchronous DRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N16D1633LPA |
512K X 16 Bits X 2 Banks Low Power Synchronous DRAM
|
NanoAmp Solutions
|
| W9816G6IH10 W9816G6IH-6I |
512K × 2 BANKS × 16 BITS SDRAM
1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
|
WINBOND ELECTRONICS CORP
|
| IS42S16100-5BL IS42S16100-5TL IS42S16100-6BL IS42S |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16100C1-7TLI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI
|
| W981616BH |
SDRAM 1Mx16
512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
| W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I |
1M × 4 BANKS × 16 BITS SDRAM
1M 4 BANKS 16 BITS SDRAM 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
|
Winbond Electronics Corp
http://
Winbond Electronics, Corp.
|
