| PART |
Description |
Maker |
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| CF003-03-000X |
K BAND, GaAs, N-CHANNEL, RF POWER, HEMFET
|
MIMIX BROADBAND INC
|
| NEZ7785-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ6472-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NEZ1414-3E |
KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| KGF1323C |
L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
OKI ELECTRIC INDUSTRY CO LTD
|
| FPD7612-000SQ |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
RF MICRO DEVICES INC
|
|
