| PART |
Description |
Maker |
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
| FLL120MK |
L-band Medium & High Power GAAS Fets
|
FUJITSU
Eudyna Devices Inc
|
| FLL357ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLU17ZM |
From old datasheet system
L-Band Medium & High Power GaAs FET
|
Fujitsu Microelectronics
Fujitsu Component Limited.
|
| FLU35ZMNBSP FLU35ZM |
L-Band Medium & High Power GaAs FET
From old datasheet system
|
List of Unclassifed Manufacturers
ETC
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HMC-APH478 H478 |
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz
GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XP1024-BD-000V XP1024-BD-EV1 |
26.0-31.0 GHz GaAs MMIC Power Amplifier 26000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
