| PART |
Description |
Maker |
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| FLL357ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell
California Eastern Laboratories
|
| FLL200IB-1 FLL200IB-2 FLL200IB-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL57MK |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| NE9000XX NE9002XX |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| XP1019-BD08 XP1019-BD-000W |
17.0-24.0 GHz GaAs MMIC
17000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MIMIX BROADBAND INC
|
| Q62702G74 CGY191 |
From old datasheet system
GaAs MMIC (Dual mode power amplifier for CDMA /TDMA portable cellular phones) 1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
