| PART |
Description |
Maker |
| JSPHS-150 |
Narrow Band Phase Shifter 50ohm 180 Voltage Variable 100 to 150 MHz
|
Mini-Circuits
|
| TOAT-3610 |
Digital Step Attenuator, 50ohm TTL Control, Pin Diode 10 to 1000 MHz 10 MHz - 1000 MHz RF/MICROWAVE VARIABLE ATTENUATOR
|
Mini-Circuits
|
| SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
| KV1401 KV1801 KV1501 KV1501-17 KV1601 |
VARACTOR DIODES HF/VHF Super Hyperabrupt Junction TM
VHF BAND, 180 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
http://
MICROSEMI CORP-LOWELL
|
| SA24CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 180 Volts
|
StarHope
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
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http://
Jinan Gude Electronic D...
|
| 1N744DO7 |
180 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-7 DO-7, 2 PIN
|
Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
|
| D56ZOV141RA1R1 |
RESISTOR, VOLTAGE DEPENDENT, 180 V, 1.1 J, THROUGH HOLE MOUNT RADIAL LEADED
|
Maida Development Company
|
| 556-7105 556-7105-22-00-00 556-7105-08-00-00 556-7 |
Variable Coil, Unshielded, Vertical, .090μH thru 1.05mΗ
UNSHIELDED, 5.02 uH - 6.2 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.352 uH - 0.431 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.09 uH - 0.11 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| AT10-0009 AT10-0009TR AT10-0009-TB DR65-0002-TBG |
800-1000 MHz, voltage variable absorptive attenuator
Voltage Variable Absorptive Attenuator/ 800 - 1000 MHz
Voltage Variable Absorptive Attenuator, 800 - 1000 MHz 变压吸附衰减器，800 - 1000兆赫
|
MA-Com
Tyco Electronics
Wieland Electric, Inc.
|
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