| PART |
Description |
Maker |
| IXBH15N160 IXBH15N140 |
From old datasheet system
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBT42N170A IXBH42N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH42N170A IXBT42N170A |
(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBN75N170A |
Discrete IGBTs
BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| LP62S2048-I LP62S2048M-10LI LP62S2048M-10LLI LP62S |
CAP .01UF 50V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
CAP 1500PF 100V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
.10UF 100V 10% MONOLITH CERM CAP
CAP 10000PF 50V CERAMIC MONO 5%
256K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| 2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications
900V/300mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
