| PART |
Description |
Maker |
| GS841Z18AGT-180 GS841Z18AGT-180I |
4Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 18 ZBT SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| GS8320Z18T-166IV GS8320Z18T-166V GS8320Z18GT-133IV |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs
|
GSI[GSI Technology]
|
| N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR
AMI[AMI SEMICONDUCTOR]
|
| GS8321Z36E-166 GS8321Z36E-133 GS8321Z36E-166I GS83 |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 7.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 32 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 32 ZBT SRAM, 7 ns, PBGA165
|
GSI Technology, Inc.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
|
Sony
|
| GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS840H18AB-100I GS840H18AB-180 GS840H18AGT-100 GS8 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z1 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z18CGT-250I GS8160Z18CGT-333 GS8160Z18CT GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
