| PART |
Description |
Maker |
| G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
| FRM3Z621LT FRM3Z621KT |
InGaAs-PIN/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE 铟镓砷放电前置放大器模块.31毫米.55毫米波长范围
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| FU-319SPP-CV6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷放电前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FRM3Z232LY |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| G10447-51 G10447-54 |
GaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| PIN-1310-2I-LCA |
3.7GBS 1310NM PIN PREAMP ROSA
|
Finisar Corporation.
|
