| PART |
Description |
Maker |
| APT65GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT32GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B APT40GP60S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT35GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT65GP60L2DF2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| 2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| APT30GP60B |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
