PART |
Description |
Maker |
APT40GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP90BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT40GP60B2DF2 |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT40GP60B APT40GP60S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT83GU30B APT83GU30S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technology
|
APT80GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo... Advanced Power Technology Ltd.
|
APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|