PART |
Description |
Maker |
APT65GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT50GP60S |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT35GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
|
APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
APT40GP60B2DQ2G APT40GP60B2DQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technolo... Advanced Power Technology
|
APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|