| PART |
Description |
Maker |
| APT40GP90J |
MOSFET
POWER MOS 7 IGBT
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology]
Advanced Power Electronics, Corp.
|
| APT25GP90B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B APT40GP60S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT15GP90B |
MOSFET
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
