| PART |
Description |
Maker |
| APT60GU30B APT60GU30S |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT40GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60S |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT45GP120J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B APT40GP60S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT25GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| 2SK2484 |
Nch power MOSFET MP-25 900V/5A
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| 2SK2941 2SK2941-ZJ-E2 2SK2941-ZJ-E1 2SK2941-ZJ-E1J |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
