| PART |
Description |
Maker |
| APT25GP90BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT75GP120B2 |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT15GP90B |
MOSFET
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK2484 |
Nch power MOSFET MP-25 900V/5A
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
| APT50M38JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
MOSFET P-CH 20V 4.3A 8-SOIC 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 500V 91A 0.038 Ohm
|
Advanced Power Technology, Ltd.
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
