Part Number Hot Search : 
KSR1205 S3062 MCF5235 S12DC12V LTC23 AT2101 SMPC13A SMA6863M
Product Description
Full Text Search

APT11GP60BDQB - POWER MOS 7 IGBT MOSFET

APT11GP60BDQB_1168633.PDF Datasheet


 Full text search : POWER MOS 7 IGBT MOSFET
 Product Description search : POWER MOS 7 IGBT MOSFET


 Related Part Number
PART Description Maker
APT32GU30B MOSFET
POWER MOS 7 IGBT
Advanced Power Technology
APT83GU30B APT83GU30S POWER MOS 7 IGBT
MOSFET
Advanced Power Technology
APT65GP60L2DF2 MOSFET
POWER MOS 7 IGBT
Advanced Power Technology
http://
2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 Power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
NEC[NEC]
NEC Corp.
APT1003RKLL APT1003RKLLG Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
SPP04N60S5 Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
SIEMENS AG
APT20M11JVR Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
Microsemi, Corp.
ADPOW[Advanced Power Technology]
APT20M22LVR APT20M22LVRG Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
Microsemi, Corp.
ADPOW[Advanced Power Technology]
2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 Low voltage 4V drive power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system
MOS Field Effect Transistor
NEC[NEC]
NEC Corp.
APT5010LLC APT5010B2LC APT5010B2LC-06 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
Advanced Power Technolo...
Advanced Power Technology Ltd.
APT10050B2VFR APT10050LVFR 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Advanced Power Technology Ltd.
 
 Related keyword From Full Text Search System
APT11GP60BDQB Specification of APT11GP60BDQB ultra APT11GP60BDQB Semiconductors APT11GP60BDQB Technolog APT11GP60BDQB resistor
APT11GP60BDQB Channel APT11GP60BDQB 应用线路 APT11GP60BDQB filetype:pdf APT11GP60BDQB Operation APT11GP60BDQB noise
 

 

Price & Availability of APT11GP60BDQB

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.49614310264587