| PART |
Description |
Maker |
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| NE5550979A-T1A-A NE5550979A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| NE5550779A-T1A NE5550779A-T1-A NE5550779A-T1A-A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5550979A NE5550979A-T1 NE5550979A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
