| PART |
Description |
Maker |
| SHB681123E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
|
Sensitron
|
| SHB681123E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 20 A, SILICON, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| GB01SHT12-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SHT06-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 10A diode in TO263 package
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
| NXPSC08650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| SHD626150 SHD626150D SHD626150N SHD626150P |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
