| PART |
Description |
Maker |
| 2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| 2SA1225 2SA1225Y |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| CMST3904 CMST3906 |
SMD Small Signal Transistor PNP General Purpose Amplifier/Switch
SMD Small Signal Transistor NPN General Purpose Amplifier/Switch
SURFACE MOUNT SUPERmini COMPLEMENTARY SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| KTC3880 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ VHF BAND AMPLIFIER)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KTC3194 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| 2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| ENA1126 FH105A |
NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC3777 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
