| PART |
Description |
Maker |
| MDS1100 |
a high power COMMON BASE bipolar transistor.
|
Microsemi Corporation
|
| TPR175 |
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| TAN250A |
Case Outline 55AW / Style 1
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| DME500 |
RF Power Transistors: AVIONICS
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
From old datasheet system
|
Advanced Power Technology
GHZTECH[GHz Technology]
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| DME500 |
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
|
GHz Technology
|
| MS3023 |
2.0 GHz, Class C, Common Base; fO (MHz): 0; P(out) (W): 3; P(in) (W): 0.5; Gain (dB): 7.8; Vcc (V): 28; Cob (pF): 9.5; Case Style: M210 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| FD2046 |
10 BASE-T, SIL FILTER (WITH 2 COMMON CHOKE)
|
Bothhand USA, LP.
|
| BUL53BSMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL52B BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL74B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL54 BUL54A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
