| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 932C2W2P2J-F 932C4W2P2J-F 932C6W2P2J-F 932C7W2P2J- |
Polypropylene Film Capacitors High Voltage/High Frequency Switching Power Supplies
|
Cornell Dubilier Electronics, Inc.
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| HF05-1A54-6 HF05-A54-5 HF05-A54-6 HF05-A54-7 HF05- |
High Frequency and High Power Reed Relays
|
Meder Electronic
|
| FP1007R1-R17-R FP1007R2-R17-R FP1007R3-R17-R FP100 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| 2014VS-66NMEB 1212VS-66NMED 2014VS-66NMED 1212VS-6 |
High Frequency, High Current Power Inductors
|
Coilcraft lnc.
|
| IRF3704ZLPBF IRF3704ZSLPBF IRF3704ZPBF IRF3704ZSPB |
High Frequency Synchronous Buck
High Frequency Synchronous Buck Converters for Computer Processor Power
|
International Rectifier
|
| KTC2803 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY HIGH FREQUENCY POWER AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| IS9-2100ARH/PROTO 5962F9953602QXC IS9-2100ARH-Q IS |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO
RES POWER .036 OHM 3W 5% SMT
Radiation Hardened High Frequency Half Bridge Driver 1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
| 2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications
|
TOSHIBA
|
