| PART |
Description |
Maker |
| BTP-87NRCT-B5-M/W BTP-87PGCT-B5-M/W BTP-87WHCT-B5- |
BriLux 1W Star Emitter BriLux 1W的星发射
|
DB Lectro Inc.
DB Lectro, Inc.
|
| BTP-89YECG-B5-H_W BTP-89YECG-B5-H_WB BTP-89NRCG-B5 |
BriLux 1W Emitter
|
DB Lectro Inc.
DBLECTRO[DB Lectro Inc]
|
| BTP-51XXCR-XX-XX |
BriLux 1W Light Source
|
DB Lectro
|
| BTP-QF1-20 |
BriLux Collimating Lens
|
DB Lectro
|
| BTP-53YECR-XX-15 BTP-53AMCR-XX-15 BTP-53BGCR-XX-15 |
BriLux 1W Light Source
|
DBLECTRO[DB Lectro Inc]
|
| 2SD2459 |
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| OL3450L-A-SFMUJ-S2 OL4451L-B-AFMUJ-S1 OL5451L-B-AF |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1300-1320nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1480-1500nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1510-1530nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1620-1640nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
|
LAPIS SEMICONDUCTOR CO LTD
|
| TCZT8012 |
Matchable Pairs ? Emitter and Detector
From old datasheet system
Matchable Pairs - Emitter and Detector
|
Vishay Telefunken
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
