PART |
Description |
Maker |
BPT-14 |
BPT-14
|
DB Lectro Inc
|
BPT-35 |
BPT-35
|
DB Lectro Inc
|
BPT-39 |
BPT-39
|
DB Lectro Inc.
|
HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs From old datasheet system 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管) 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation FAIRCHILD SEMICONDUCTOR CORP
|
BPT-NP23C2 BPT-NP03C1 BPT-NP03C2 BPT-NP13C1 BPT-NP |
BPT-NP13C1
|
List of Unclassifed Manufacturers ETC[ETC]
|
BPT-22B |
BPT-22B
|
DB Lectro Inc
|
BPT-17B |
BPT-17B
|
DB Lectro Inc
|
P930-06 P444 P465 P474 P577-04 P412W P412K P414KW |
THYRISTOR MODULE|AC SWITCH|1KV V(RRM)|44A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|20A I(T) THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|20A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|20A I(T) THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|20A I(T) THYRISTOR MODULE|AC SWITCH|600V V(RRM)|44A I(T) 16 BIT MCU/DSP 28LD 40MIPS 32KB FLASH, -40C to 125C, 28-SOIC 300mil, TUBE
|
Microchip Technology, Inc.
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
FDD8424HF085A13 |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
|
Fairchild Semiconductor
|
20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08ST |
INPUT RECTIFIER DIODE 1200V 20A Std. Recovery Diode in a D2-Pakpackage 1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package 20ETS12/20ETS12S 800V 20A Std. Recovery Diode in a D2-Pakpackage 800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package From old datasheet system SURFACE MOUNTABLE INPUT RECTIFIER DIODE
|
InternationalRectifier IRF[International Rectifier]
|