| PART |
Description |
Maker |
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK296 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
| 3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| 3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| 3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK22607 3SK226 |
Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications
|
Toshiba Semiconductor
|
| IN74HC20A IN74HC20AD IN74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
| IN74HC20AN IN74HC20A IN74HC20AD |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
|
| IN74HCT20N IN74HCT20 IN74HCT20D |
DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS
|
INTEGRAL Semiconductor Devices
INTEGRAL[Integral Corp.]
|
