| PART |
Description |
Maker |
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTMD6P02R2 NTMD6P02R2-D NTMD6P02 |
Power MOSFET 6 Amps, 20 Volts P?Channel SO, Dual(6A0V，双P沟道SO-8封装的功率MOSFET)
Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
|
ONSEMI[ON Semiconductor]
|
| NTMD6N02R2/D NTMD6N02R2-D |
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package
Power MOSFET 6.0 Amps20 Volts
|
ON Semiconductor
|
| NTD6N40/D NTD6N40-D |
Power MOSFET 6 Amps, 400 Volts N-Channel DPAK
Power MOSFET 6 Amps400 Volts
|
ON Semiconductor
|
| NTD3055-150-D NTD3055-150/D |
Power MOSFET 9.0 Amps60 Volts
Power MOSFET 9.0 Amps, 60 Volts N-Channel DPAK
|
ON Semiconductor
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTB45N06L NTP45N06LG |
Power MOSFET 45 Amps, 60 Volts, Logic Level; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 50 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 45 Amps, 60 Volts, Logic Level, N-Channel TO-220; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 45 Amps, 60 Volts Logic Level, N?Channel TO?20 and D2PAK
|
ON Semiconductor
|
| MTP23P06VG |
Power MOSFET 23 Amps, 60 Volts
|
ON Semiconductor
|
| NTF6P02T3_06 NTF6P02T3 NTF6P02T3G NTF6P02T306 |
Power MOSFET -6.0 Amps, -20 Volts
|
ONSEMI[ON Semiconductor]
|
| NTQS6463R2 NTQS6463 |
Power MOSFET 6.2 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
|
