| PART |
Description |
Maker |
| NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D-A |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| NE434S01 NE434S01-T1B NE434S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE32584 NE32584C NE32584C-S NE32584C-T NE32584C-SL |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE4210M01 NE4210M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC[NEC]
|
| NE3503M04-T2 NE3503M04-T2B |
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE3503M04 NE3503M04-A NE3503M04-T2-A |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
CEL
California Eastern Labs
|
| NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A |
KJ 55C 55#22 SKT PLUG C到Ku波段超低噪声放大器N沟道黄建忠场效应
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE3503M04-T2-A NE3503M04-A |
PC 3C 3#16 PIN RECP
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET 邻舍C至超级Ku波段低噪声和高增益放大器 - CHANNER黄建忠场效应
|
California Eastern Laboratories, Inc.
|
| M5238AFP M5238AL M5238AP M5238P M5238FP |
DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS 双路低噪声J - FET输入运算放大
DUAL LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS
CRYSTAL 30.000 MHZ 10PF SMD 双低噪声JFET输入运算放大
Dual Low Noise J-Fet Input Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| NE321000 NE321000- |
TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP 晶体管|场效应| N沟道| 4V五（巴西）直| 15mA的我（直）|芯片
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC, Corp.
NEC[NEC]
|
| ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
