| PART |
Description |
Maker |
| NE4210S01 NE4210S01-T1 NE4210S01-T1B |
SUPER LOW NOISE HJ FET
|
California Eastern Labs
|
| EPB018A5 EPB018A7 |
4-5V high super low noise high gain heterojunction power FET
Super Low Noise High Gain Heterojunction FET
|
Excelics Semiconductor, Inc.
|
| NE434S01 NE434S01-T1B NE434S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE32584 NE32584C NE32584C-S NE32584C-T NE32584C-SL |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE3515S02-T1C-A |
X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
|
| EPB018B5 EPB018B7 EPB018B9-70 |
Super Low Noise High Gain Heterojunction FET
|
Excelics Semiconductor, Inc.
|
| NE350184C NE350184C-T1A NE350184C-T1 NE350184C-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
CEL
|
| 2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
|
http://
NEC[NEC]
NEC Corp.
|
| ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| NE32000 NE32084 NE32083A |
LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
|
NEC Corp.
NEC[NEC]
|
| ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
