PART |
Description |
Maker |
GA1A3Q GA1A3Q-T1 GA1A3Q-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC Corp.
|
GA1L3M GA1L3M-T2 GA1L3M-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
GN1A4P GN1A4P-T1 GN1A4P-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
GA1L4Z GA1L4Z-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
GA1F4Z GA1F4ZL65 GA1F4ZL64 GA1F4Z-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323
|
NEC[NEC] NEC Corp. NEC, Corp.
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
BB1 BB1A4A BB1A4M BB1L3N BB1A3M BB1F3P BB1J3P BB1L |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching Hybrid transistor
|
NEC Corp. NEC[NEC]
|
DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5 100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5 100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
AN1A3Q AN1A3Q-T AN1A3Q-T/JD AN1A3Q-T/JM AN1A3QC AN |
Hybrid transistor On-Chip Resistor PNP Silicon Epitaxial Transistor
|
NEC
|
AP1L3N AP1A3M AP1A4A AP1A4M AP1F3P AP1J3P AP1L2Q A |
on-chip resistor NPN silicon epitaxial transistor Hybrid transistor
|
NEC Corp. NEC[NEC]
|